Sách - 3D Integration of Resistive Switching Memory by Qing Luo (UK edition, hardcover)

Ships from and sold by EXPERAL Singapore Publisher: Taylor & Francis Ltd Origin: United Kingdom (Imported) ISBN 13: 9781032489438 Condition: Brandnew Binding: hardcover Pages: 98 Dimensons: 216 x 138 x 7.87 | 360 (gram) ---------------------------------------- This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general. Giá sản phẩm trên Tiki đã bao gồm thuế theo luật hiện hành. Bên cạnh đó, tuỳ vào loại sản phẩm, hình thức và địa chỉ giao hàng mà có thể phát sinh thêm chi phí khác như phí vận chuyển, phụ phí hàng cồng kềnh, thuế nhập khẩu (đối với đơn hàng giao từ nước ngoài có giá trị trên 1 triệu đồng).....